发明授权
- 专利标题： Thin film transistor for integrated circuit
- 专利标题（中）： 用于集成电路的薄膜晶体管
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申请号： US14330444申请日： 2014-07-14
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公开(公告)号： US09281409B2公开(公告)日： 2016-03-08
- 发明人: Shunpei Yamazaki , Daisuke Matsubayashi , Yoshiyuki Kobayashi
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2013-147332 20130716
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/423 ; H01L27/12
摘要：
A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film, and side and top surfaces of the second oxide semiconductor film; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the gate insulating film and faces the top and side surfaces a of the second oxide semiconductor film. A thickness of the first oxide semiconductor film is larger than a sum of a thickness of the third oxide semiconductor film and a thickness of the gate insulating film, and the difference is larger than or equal to 20 nm.
公开/授权文献
- US20150021596A1 Semiconductor Device 公开/授权日：2015-01-22
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