Invention Grant
US09276087B2 Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
有权
使用牺牲栅极图案和鳍的选择性氧化制造FINFET半导体器件的方法
- Patent Title: Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
- Patent Title (中): 使用牺牲栅极图案和鳍的选择性氧化制造FINFET半导体器件的方法
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Application No.: US14262937Application Date: 2014-04-28
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Publication No.: US09276087B2Publication Date: 2016-03-01
- Inventor: Sungmin Kim , Sung-Dae Suk , Jaehoo Park , Dongho Cha , Daewon Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2013-0053207 20130510; KR10-2013-0069736 20130618
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L29/66 ; H01L21/02
Abstract:
A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.
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