Invention Grant
- Patent Title: Decoupling MIM capacitor designs for interposers and methods of manufacture thereof
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Application No.: US14265223Application Date: 2014-04-29
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Publication No.: US09263415B2Publication Date: 2016-02-16
- Inventor: Kuo-Chyuan Tzeng , Kuo-Chi Tu , Chen-Jong Wang , Hsiang-Fan Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/14 ; H01L23/498 ; H01L49/02 ; H01L27/06 ; H01L23/31 ; H01L23/522 ; H01L27/08
Abstract:
Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.
Public/Granted literature
- US20140235019A1 Decoupling MIM Capacitor Designs for Interposers and Methods of Manufacture Thereof Public/Granted day:2014-08-21
Information query
IPC分类:
