发明授权
- 专利标题： Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
- 专利标题（中）： 外延膜成膜方法，真空处理装置，半导体发光元件制造方法，半导体发光元件和照明装置
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申请号： US13661948申请日： 2012-10-26
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公开(公告)号： US09252322B2公开(公告)日： 2016-02-02
- 发明人: Yoshiaki Daigo , Keiji Ishibashi
- 申请人： CANON ANELVA CORPORATION
- 申请人地址： JP Kawasaki-shi
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2010-105101 20100430
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00 ; C23C16/458 ; C30B23/02 ; C30B29/40 ; H01L21/02 ; H01L33/18
摘要：
The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an α-Al2O3 substrate heated to a desired temperature by using a heater. First, the α-Al2O3 substrate is disposed on a substrate holder including the heater in such a way that the α-Al2O3 substrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the α-Al2O3 substrate in the state where the α-Al2O3 substrate is disposed away from the heater by the predetermined distance.
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