Invention Grant
US09244351B2 Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns
有权
用于硬掩模的组合物，使用其形成图案的方法，以及包括图案的半导体集成电路器件
- Patent Title: Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns
- Patent Title (中): 用于硬掩模的组合物，使用其形成图案的方法，以及包括图案的半导体集成电路器件
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Application No.: US14368858Application Date: 2012-11-23
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Publication No.: US09244351B2Publication Date: 2016-01-26
- Inventor: Sung-Jae Lee , Joon-Young Moon , Youn-Jin Cho , Young-Min Kim , Yong-Woon Yoon
- Applicant: Sung-Jae Lee , Joon-Young Moon , Youn-Jin Cho , Young-Min Kim , Yong-Woon Yoon
- Applicant Address: KR Gumi-si, Gyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Gyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0147875 20111230; KR10-2012-0131181 20121119
- International Application: PCT/KR2012/009983 WO 20121123
- International Announcement: WO2013/100375 WO 20130704
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G03F7/11 ; G03F7/09 ; H01L21/027 ; G03F7/075 ; H01L21/033
Abstract:
A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.
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