Invention Grant
- Patent Title: Method for producing a structure for microelectronic device assembly
- Patent Title (中): 微电子器件组装结构的制造方法
-
Application No.: US14090321Application Date: 2013-11-26
-
Publication No.: US09241403B2Publication Date: 2016-01-19
- Inventor: Gabriel Pares
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1261391 20121129
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K3/40 ; H05K3/46 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L23/498

Abstract:
Forming of a microelectronic device including a substrate containing at least one conductive pad, the pad being provided with a bottom surface resting on the substrate and an upper surface opposite the bottom surface. The upper surface of the pad has a stack applied thereto formed of a conductive layer and a protective dielectric layer including an opening called first opening facing the pad and exposing the conductive layer. At least one insulating block is arranged on a peripheral region of the upper surface of the pad, the insulating block having a cross-section forming a closed contour and having an opening called second opening. A conductive pillar is located in the center of the contour in the second opening.
Public/Granted literature
- US20140144690A1 METHOD FOR PRODUCING A STRUCTURE FOR MICROELECTRONIC DEVICE ASSEMBLY Public/Granted day:2014-05-29
Information query