Invention Grant
- Patent Title: Single-package bridge-type magnetic field sensor
- Patent Title (中): 单包桥型磁场传感器
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Application No.: US13979721Application Date: 2011-12-31
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Publication No.: US09234948B2Publication Date: 2016-01-12
- Inventor: James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
- Applicant: James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
- Applicant Address: CN
- Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee Address: CN
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201110008762 20110117; CN201110141214 20110527
- International Application: PCT/CN2011/085124 WO 20111231
- International Announcement: WO2012/097673 WO 20120726
- Main IPC: G01R33/02
- IPC: G01R33/02 ; G01R33/09

Abstract:
A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
Public/Granted literature
- US20130300409A1 Single-Package Bridge-Type Magnetic Field Sensor Public/Granted day:2013-11-14
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