Invention Grant
- Patent Title: Well resistors and polysilicon resistors
- Patent Title (中): 好的电阻和多晶硅电阻
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Application No.: US14287434Application Date: 2014-05-27
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Publication No.: US09202859B1Publication Date: 2015-12-01
- Inventor: Stephen Keith Heinrich-Barna , Douglas P. Verret , Alwin J. Tsao
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H01L29/06 ; H01L21/762 ; H01L21/3105 ; H01L21/265 ; H01L21/324 ; H01L21/8234

Abstract:
An integrated circuit containing a well resistor has STI field oxide and resistor dummy active areas in the well resistor. STI trenches are etched and filled with trench fill dielectric material. The trench fill dielectric material is removed from over the active areas by a CMP process, leaving STI field oxide in the STI trenches. Subsequently, dopants are implanted into a substrate in the well resistor area to form the well resistor. An integrated circuit containing a polysilicon resistor has STI field oxide and resistor dummy active areas in an area for the polysilicon resistor. A layer of polysilicon is formed and planarized by a CMP process. A polysilicon etch mask is formed over the CMP-planarized polysilicon layer to define the polysilicon resistor. A polysilicon etch process removes polysilicon in areas exposed by the polysilicon etch mask, leaving the polysilicon resistor.
Public/Granted literature
- US20150349046A1 WELL RESISTORS AND POLYSILICON RESISTORS Public/Granted day:2015-12-03
Information query
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