发明授权
- 专利标题： Magnetoresistive random access memory cell and fabricating the same
- 专利标题（中）： 磁阻随机存取存储器单元制造
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申请号： US13587642申请日： 2012-08-16
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公开(公告)号： US09178136B2公开(公告)日： 2015-11-03
- 发明人: Kuo-Ming Wu , Kai-Wen Cheng , Cheng-Yuan Tsai , Chia-Shiung Tsai
- 申请人： Kuo-Ming Wu , Kai-Wen Cheng , Cheng-Yuan Tsai , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/12 ; H01L43/08
摘要：
The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a tunneling layer disposed over the pinned layer, a free layer disposed over the tunneling layer and a capping layer disposed over the free layer. The capping layer includes metal-oxide and metal-nitride materials.
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