发明授权
- 专利标题： Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
- 专利标题（中）： 具有单晶束的集成半导体器件，制造方法和设计结构
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申请号： US14713327申请日： 2015-05-15
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公开(公告)号： US09172025B2公开(公告)日： 2015-10-27
- 发明人: David L. Harame , Stephen E. Luce , Anthony K. Stamper
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Hopewell Junction
- 专利权人： GLOBALFOUNDRIES U.S. 2 LLC
- 当前专利权人： GLOBALFOUNDRIES U.S. 2 LLC
- 当前专利权人地址： US NY Hopewell Junction
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Andrew M. Calderon
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/76 ; H01L41/083 ; H01L41/08
摘要：
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, are provided. The structure includes a single crystalline beam formed from a silicon layer of a silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in lower wafer bonded to an insulator layer of the SOI substrate, below the single crystalline beam and the insulator layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) in electrical connection with the single crystalline beam.
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