Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14249097Application Date: 2014-04-09
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Publication No.: US09171791B2Publication Date: 2015-10-27
- Inventor: Shinji Baba , Toshihiro Iwasaki , Masaki Watanabe
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-005403 20100114
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/50 ; H01L25/10

Abstract:
This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled to a plurality of signal wirings drawn inside are located between a plurality of rows of signal bonding electrodes and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced without an increase in the number of layers in the multilayer wiring substrate.
Public/Granted literature
- US20140217582A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-08-07
Information query
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