Invention Grant
US09165821B2 Method for providing a self-aligned pad protection in a semiconductor device
有权
在半导体器件中提供自对准焊盘保护的方法
- Patent Title: Method for providing a self-aligned pad protection in a semiconductor device
- Patent Title (中): 在半导体器件中提供自对准焊盘保护的方法
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Application No.: US14138158Application Date: 2013-12-23
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Publication No.: US09165821B2Publication Date: 2015-10-20
- Inventor: Michael Rogalli , Wolfgang Lehnert
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/3213
Abstract:
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over the final metal layer and structuring the passivation layer and the final metal layer to form a patterned metal layer and a patterned passivation layer, wherein the patterned metal layer includes a pad region covered by the patterned passivation layer.
Public/Granted literature
- US20150179507A1 METHODS FOR PROCESSING A SEMICONDUCTOR DEVICE Public/Granted day:2015-06-25
Information query
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