发明授权
- 专利标题: Evaporation donor substrate, method for manufacturing the same, and method for manufacturing light-emitting device
- 专利标题(中): 蒸镀供体基板及其制造方法以及发光装置的制造方法
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申请号: US12338449申请日: 2008-12-18
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公开(公告)号: US09159923B2公开(公告)日: 2015-10-13
- 发明人: Kohei Yokoyama , Yosuke Sato , Tomoya Aoyama , Rena Takahashi
- 申请人: Kohei Yokoyama , Yosuke Sato , Tomoya Aoyama , Rena Takahashi
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2007-333565 20071226
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; H01L51/00 ; C23C14/04
摘要:
An evaporation donor substrate that makes it possible to evaporate only a desired evaporation material in the case of performing deposition by an evaporation method. Thus, the use efficiency of an evaporation material can be increased resulting in reduction in production cost, and further a film with high uniformity can be deposited. The evaporation donor substrate can be obtained by forming a reflective layer having an opening over a substrate, forming a thermal insulation layer having a light-transmitting property separately over the substrate and the reflective layer, forming a light absorption layer over the thermal insulation layer, and forming a material layer over the light absorption layer.
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