发明授权
- 专利标题： Method of forming substrate pattern
- 专利标题（中）： 形成基板图案的方法
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申请号： US14180409申请日： 2014-02-14
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公开(公告)号： US09159577B2公开(公告)日： 2015-10-13
- 发明人: Chun-Yu Lin , Feng-Yuan Chiu , Bing-Syun Yeh , Yi-Jie Chen , Ying-Chou Cheng , I-Chang Shih , Ru-Gun Liu , Shih-Ming Chang
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/306 ; H01L21/311 ; H01L21/312 ; H01L21/033 ; H01L21/3065 ; G03F1/36
摘要：
According to an exemplary embodiment, a method of forming a substrate pattern having an isolated region and a dense region is provided. The method includes the following operations: forming a first photoresist layer over the substrate; exposing the first photoresist layer through a first mask corresponding to the isolated region; developing the first photoresist layer to form a first pattern; forming a second photoresist layer over the substrate and the first pattern; exposing the second photoresist layer through a second mask corresponding to the substrate pattern; developing the second photoresist layer to form a second pattern; and etching the first pattern and the substrate to form the substrate pattern in the isolated region and the dense region.
公开/授权文献
- US20150235857A1 METHOD OF FORMING SUBSTRATE PATTERN 公开/授权日：2015-08-20
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