发明授权
US09153641B2 Wafer level package having cylindrical capacitor and method of fabricating the same
有权
具有圆柱形电容器的晶片级封装及其制造方法
- 专利标题： Wafer level package having cylindrical capacitor and method of fabricating the same
- 专利标题（中）： 具有圆柱形电容器的晶片级封装及其制造方法
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申请号： US13752238申请日： 2013-01-28
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公开(公告)号： US09153641B2公开(公告)日： 2015-10-06
- 发明人: Seung Seoup Lee , Soon Gyu Yim
- 申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： NSIP Law
- 优先权： KR10-2009-0075760 20090817; KR10-2010-0003866 20100115
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02 ; H01L49/02 ; H01L23/522 ; H01L23/31
摘要：
Disclosed is a wafer level package having a cylindrical capacitor, which is capable of increasing electrostatic capacity thanks to the use of a cylindrical capacitor structure and which includes a wafer chip having a bonding pad formed thereon and an insulating layer formed thereon and exposing the bonding pad, a redistribution layer connected to the bonding pad and extending to one side of the insulating layer, a cylindrical outer electrode connected to the redistribution layer and having a center opening therein, a cylindrical inner electrode formed in the center opening of the outer electrode so as to be separated from the outer electrode, a dielectric layer formed between the outer electrode and the inner electrode, and a resin sealing portion formed on the insulating layer to cover the redistribution layer, the inner electrode, the outer electrode and the dielectric layer and having a first recess for exposing an upper surface of the inner electrode. A method of fabricating the wafer level package having a cylindrical capacitor is also provided.
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