A solid-state image sensor includes a structure having a semiconductor layer in which a plurality of photoelectric converters are arranged, a light blocking member arranged above a face of the structure and including a plurality of circular openings each corresponding to at least one of the photoelectric converters, a first layer configured to cover the light blocking member, and exposed portions of the face of the structure, that are formed by the plurality of circular openings, and a second layer arranged to cover the first layer and having a refractive index higher than that of the first layer, wherein an interface between the first layer and the second layer includes lens faces protruding toward the exposed portions.