Invention Grant
- Patent Title: Polysilicon thin film and manufacturing method thereof, array substrate and display device
- Patent Title (中): 多晶硅薄膜及其制造方法,阵列基板及显示装置
-
Application No.: US13963112Application Date: 2013-08-09
-
Publication No.: US09142409B2Publication Date: 2015-09-22
- Inventor: Tuo Sun
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Priority: CN201210375067 20120929
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/02 ; H01L29/66 ; H01L29/786 ; H01L27/12

Abstract:
A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon so as to obtain the polysilicon thin film. The polysilicon thin film manufactured by the method possesses good characteristics.
Public/Granted literature
- US20140091305A1 Polysilicon Thin Film And Manufacturing Method Thereof, Array Substrate And Display Device Public/Granted day:2014-04-03
Information query
IPC分类: