发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US14019788申请日： 2013-09-06
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公开(公告)号： US09136358B2公开(公告)日： 2015-09-15
- 发明人: Yoshihiro Akutsu , Hiroshi Shinohara , Ryota Katsumata
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/66 ; H01L27/115
摘要：
According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including a plurality of electrode layers and a plurality of first insulating layers; a first channel body layer penetrating the stacked body; a memory film; an interlayer insulating film provided on the stacked body; a selection gate electrode provided on the interlayer insulating film; a second channel body layer penetrating the selection gate electrode and the interlayer insulating film and connected to the first channel body; a gate insulating film provided between the selection gate electrode and the second channel body layer; a second insulating layer provided on the gate insulating film and on the selection gate electrode; a contact layer provided on the second insulating layer; and a diffusion layer provided between the contact layer and the second insulating layer and connected to the second channel body layer and the contact layer.
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