Invention Grant
- Patent Title: Patterning method
- Patent Title (中): 图案化方法
-
Application No.: US14025524Application Date: 2013-09-12
-
Publication No.: US09136140B2Publication Date: 2015-09-15
- Inventor: Wen-Liang Huang , Chia-Hung Lin , Chun-Chi Yu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/308
Abstract:
A patterning method is provided. First, a material layer is formed over a substrate. Thereafter, a plurality of directed self-assembly (DSA) patterns are formed on the material layer. Afterwards, a patterned photoresist layer is formed by using a single lithography process. The patterned photoresist layer covers a first portion of the DSA patterns and exposes a second portion of the DSA patterns. Further, the material layer is patterned by an etching process, using the patterned photoresist layer and the second portion of the DSA patterns as a mask.
Public/Granted literature
- US20150072532A1 PATTERNING METHOD Public/Granted day:2015-03-12
Information query
IPC分类:
