发明授权
US09136128B2 Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
有权
包括具有气隙的记忆体和其它低介电常数材料的方法和装置
- 专利标题： Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
- 专利标题（中）： 包括具有气隙的记忆体和其它低介电常数材料的方法和装置
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申请号： US13222367申请日： 2011-08-31
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公开(公告)号： US09136128B2公开(公告)日： 2015-09-15
- 发明人: Minsoo Lee , Akira Goda
- 申请人： Minsoo Lee , Akira Goda
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/28 ; H01L29/66 ; H01L21/764 ; H01L29/423
摘要：
Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed.
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