发明授权
US09136111B1 Field effect transistors with gate electrodes having Ni and Ti metal layers
有权
具有栅电极的场效应晶体管具有Ni和Ti金属层
- 专利标题： Field effect transistors with gate electrodes having Ni and Ti metal layers
- 专利标题（中）： 具有栅电极的场效应晶体管具有Ni和Ti金属层
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申请号： US13537538申请日： 2012-06-29
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公开(公告)号： US09136111B1公开(公告)日： 2015-09-15
- 发明人: Kanin Chu , Pane-Chane Chao , Kirby B. Nichols , Gabriel Cueva
- 申请人： Kanin Chu , Pane-Chane Chao , Kirby B. Nichols , Gabriel Cueva
- 申请人地址： US NH Nashua
- 专利权人： BAE Systems Information and Electronic Systems Integration Inc.
- 当前专利权人： BAE Systems Information and Electronic Systems Integration Inc.
- 当前专利权人地址： US NH Nashua
- 代理机构： Maine Cernota & Rardin
- 代理商 Andrew P. Cernota; Daniel J. Long
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/02
摘要：
A field effect transistor and method for making such a transistor is provided, the field effect transistor comprising: a gate layer stack comprising a layer of a first metal is disposed proximate to at least one layer of a second metal, wherein the first metal alloys with the second metal to form a shape memory alloy. The shape metal allow may be NiTi, and at the contact plane between the layers, the alloy is formed when the transistor is heated to an elevated temperature.
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