发明授权
- 专利标题: Structure of dielectric grid with a metal pillar for semiconductor device
- 专利标题(中): 具有半导体器件金属柱的电介质栅结构
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申请号: US13968260申请日: 2013-08-15
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公开(公告)号: US09130077B2公开(公告)日: 2015-09-08
- 发明人: Ssu-Chiang Weng , Kuo-Cheng Lee , Chi-Cherng Jeng
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232 ; H01L31/18
摘要:
An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a substrate, sensor elements disposed at a front surface of the substrate, and a dielectric grid disposed over a back surface of the substrate. The dielectric grid includes a first dielectric layer as a bottom portion, a metal pillar, as a core portion of a upper portion, disposed over the first dielectric layer and a second dielectric layer wrapping around the metal pillar. The image sensor device also includes a stack of layers disposed over the back surface of the substrate. Refractive index of each layers increases from top layer to bottom layer. The image sensor device also includes a color filter and a microlens disposed over the back surface of the substrate.
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