发明授权
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US14539152申请日： 2014-11-12
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公开(公告)号： US09129850B2公开(公告)日： 2015-09-08
- 发明人: Hiroyuki Ode
- 申请人： PS4 LUXCO S.A.R.L.
- 申请人地址： LU Luxembourg
- 专利权人： PS4 Luxco S.a.r.l.
- 当前专利权人： PS4 Luxco S.a.r.l.
- 当前专利权人地址： LU Luxembourg
- 优先权： JP2011-267690 20111207
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L27/108 ; H01L21/768 ; H01L27/02
摘要：
A semiconductor device comprises a conductor film and a capacitor comprising a lower electrode provided on the conductor film. The conductor film includes a first conductive film containing a first metal, a second conductive film containing a second metal on the first conductive film, and an oxide film of the second metal on the second conductive film. The oxide film of the second metal has a lower electric resistivity than an oxide film of the first metal.
公开/授权文献
- US20150072501A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2015-03-12
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