Invention Grant
- Patent Title: Single-chip bridge-type magnetic field sensor and preparation method thereof
- Patent Title (中): 单片桥式磁场传感器及其制备方法
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Application No.: US14009834Application Date: 2012-04-01
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Publication No.: US09123877B2Publication Date: 2015-09-01
- Inventor: Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
- Applicant: Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
- Applicant Address: CN
- Assignee: Multidimension Technology Co., Ltd.
- Current Assignee: Multidimension Technology Co., Ltd.
- Current Assignee Address: CN
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201110084595 20110406; CN201110326762 20111025
- International Application: PCT/CN2012/073488 WO 20120401
- International Announcement: WO2012/136132 WO 20121011
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; G01B7/30 ; G01R33/09 ; G11B5/39 ; B82Y10/00
Abstract:
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
Public/Granted literature
- US20140021571A1 Single-chip bridge-type magnetic field sensor and preparation method thereof Public/Granted day:2014-01-23
Information query
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