发明授权
- 专利标题： Elevated photodiode with a stacked scheme
- 专利标题（中）： 具有堆叠方案的高架光电二极管
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申请号： US14531820申请日： 2014-11-03
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公开(公告)号： US09123617B2公开(公告)日： 2015-09-01
- 发明人: Meng-Hsun Wan , Yi-Shin Chu , Szu-Ying Chen , Pao-Tung Chen , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/146 ; H01L31/0352 ; H01L31/18
摘要：
A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.
公开/授权文献
- US20150064832A1 Elevated Photodiode with a Stacked Scheme 公开/授权日：2015-03-05
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