发明授权
- 专利标题： Backside illuminated CMOS image sensor
- 专利标题（中）： 背面照明CMOS图像传感器
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申请号： US13416004申请日： 2012-03-09
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公开(公告)号： US09123608B2公开(公告)日： 2015-09-01
- 发明人: Shiu-Ko JangJian , Volume Chien , Szu-An Wu
- 申请人： Shiu-Ko JangJian , Volume Chien , Szu-An Wu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/146
摘要：
A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
公开/授权文献
- US20130149807A1 Backside Illuminated CMOS Image Sensor 公开/授权日：2013-06-13
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