发明授权
- 专利标题： Semiconductor light emitting devices grown on composite substrates
- 专利标题（中）： 在复合基板上生长的半导体发光器件
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申请号： US12236853申请日： 2008-09-24
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公开(公告)号： US09117944B2公开(公告)日： 2015-08-25
- 发明人: Melvin B. McLaurin , Michael R. Krames
- 申请人： Melvin B. McLaurin , Michael R. Krames
- 申请人地址： NL Eindhoven US CA San Jose
- 专利权人： Koninklijke Philips N.V.,Philips Lumileds Lighting Company LLC
- 当前专利权人： Koninklijke Philips N.V.,Philips Lumileds Lighting Company LLC
- 当前专利权人地址： NL Eindhoven US CA San Jose
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L27/15 ; H01L33/62 ; H01L33/08 ; H01L33/12 ; H01L33/38 ; H01L33/42 ; H01L33/50
摘要：
A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.
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