发明授权
- 专利标题: Bonding wire for semiconductor device
- 专利标题(中): 半导体器件用接合线
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申请号: US13349155申请日: 2012-01-12
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公开(公告)号: US09112059B2公开(公告)日: 2015-08-18
- 发明人: Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
- 申请人: Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
- 申请人地址: JP Tokyo JP Saitama
- 专利权人: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.,NIPPON MICROMETAL CORPORATION
- 当前专利权人: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.,NIPPON MICROMETAL CORPORATION
- 当前专利权人地址: JP Tokyo JP Saitama
- 代理机构: Troutman Sanders LLP
- 优先权: JP2007-192193 20070724
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L23/00
摘要:
It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
公开/授权文献
- US20120104613A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 公开/授权日:2012-05-03
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