Invention Grant
- Patent Title: Copper plating method
- Patent Title (中): 镀铜方法
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Application No.: US12931854Application Date: 2011-02-11
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Publication No.: US09103012B2Publication Date: 2015-08-11
- Inventor: Chao-Peng Chen , Jas Chudasama , Chien-Li Lin , David Wagner
- Applicant: Chao-Peng Chen , Jas Chudasama , Chien-Li Lin , David Wagner
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: C25D5/34
- IPC: C25D5/34 ; C23C2/02 ; C23C14/58 ; C25D5/02 ; G11B5/17 ; C23F1/12

Abstract:
A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.
Public/Granted literature
- US20120205344A1 Copper plating method Public/Granted day:2012-08-16
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