发明授权
US09087699B2 Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
有权
在衬底中形成开口阵列的方法以及形成半导体器件结构的相关方法
- 专利标题： Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
- 专利标题（中）： 在衬底中形成开口阵列的方法以及形成半导体器件结构的相关方法
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申请号： US13646131申请日： 2012-10-05
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公开(公告)号： US09087699B2公开(公告)日： 2015-07-21
- 发明人: Dan B. Millward
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/033 ; H01L21/768 ; H01L27/108
摘要：
A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.
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