Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor

Invention Grant

US09082877B2 Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor 有权

Title translation: 具有通过金属栅极导体连接的栅极结构的互补金属氧化物半导体（CMOS）器件

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Patent Title: Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
Patent Title (中): 具有通过金属栅极导体连接的栅极结构的互补金属氧化物半导体（CMOS）器件
Application No.: US14292312

Application Date: 2014-05-30
Publication No.: US09082877B2

Publication Date: 2015-07-14
Inventor: Yue Liang , Dureseti Chidambarrao , Brian J. Greene , William K. Henson , Unoh Kwon , Shreesh Narasimha , Xiaojun Yu
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent H. Daniel Schnurmann
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/28 ; H01L21/306 ; H01L21/762 ; H01L29/49

Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor

Abstract:

A complementary metal oxide semiconductor (CMOS) device including a substrate including a first active region and a second active region, wherein each of the first active region and second active region of the substrate are separated by from one another by an isolation region. A n-type semiconductor device is present on the first active region of the substrate, in which the n-type semiconductor device includes a first portion of a gate structure. A p-type semiconductor device is present on the second active region of the substrate, in which the p-type semiconductor device includes a second portion of the gate structure. A connecting gate portion provides electrical connectivity between the first portion of the gate structure and the second portion of the gate structure. Electrical contact to the connecting gate portion is over the isolation region, and is not over the first active region and/or the second active region.

Abstract(Chinese):

一种互补金属氧化物半导体（CMOS）器件，包括包括第一有源区和第二有源区的衬底，其中衬底的第一有源区和第二有源区中的每一个被隔离区彼此分开。 n型半导体器件存在于衬底的第一有源区上，其中n型半导体器件包括栅极结构的第一部分。 p型半导体器件存在于衬底的第二有源区上，其中p型半导体器件包括栅极结构的第二部分。连接栅极部分提供栅极结构的第一部分和栅极结构的第二部分之间的电连接。与连接栅极部分的电接触超过隔离区域，并且不在第一有源区域和/或第二有源区域之上。

Public/Granted literature

US20140349451A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE HAVING GATE STRUCTURES CONNECTED BY A METAL GATE CONDUCTOR Public/Granted day:2014-11-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS