Invention Grant
- Patent Title: Methods of forming vertical type semiconductor devices including oxidation target layers
- Patent Title (中): 形成包括氧化靶层的垂直型半导体器件的方法
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Application No.: US14643527Application Date: 2015-03-10
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Publication No.: US09082659B1Publication Date: 2015-07-14
- Inventor: Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
- Applicant: Phil-Ouk Nam , Jun-Kyu Yang , Byong-Hyun Jang , Ki-Hyun Hwang , Jae-Young Ahn
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0093415 20120827; KR10-2013-0004203 20130115
- Main IPC: H01L27/115
- IPC: H01L27/115

Abstract:
A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.
Public/Granted literature
- US20150187790A1 METHODS OF FORMING VERTICAL TYPE SEMICONDUCTOR DEVICES INCLUDING OXIDATION TARGET LAYERS Public/Granted day:2015-07-02
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