Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14347177Application Date: 2013-01-10
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Publication No.: US09076752B2Publication Date: 2015-07-07
- Inventor: Toshiyuki Kojima , Tsukasa Shiraishi , Norihito Tsukahara , Takayuki Hirose , Keiko Ikuta , Masayoshi Koyama
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2012-029005 20120214
- International Application: PCT/JP2013/000036 WO 20130110
- International Announcement: WO2013/121691 WO 20130822
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/34 ; H01L23/10 ; H01L23/36 ; H01L23/40 ; H01L23/492 ; H01L23/051 ; H01L23/00 ; H01L21/48 ; H01L23/24
Abstract:
A semiconductor device (1) includes: a semiconductor chip (2) having a first main surface and a second main surface opposite to the first main surface; a heat dissipating plate (3) opposed to the first main surface; a first electrode (5) disposed between the first main surface and the heat dissipating plate (3) so as to be electrically connected to the semiconductor chip (2); a pressure contact member (4) opposed to the second main surface; a second electrode (6) disposed between the second main surface and the pressure contact member (4) so as to be electrically connected to the semiconductor chip (2); and a pressure generating mechanism that generates a pressure for pressing the first electrode (5) into contact with the heat dissipating plate (3) and the semiconductor chip (2) and pressing the second electrode (6) into contact with the pressure contact member (4) and the semiconductor chip (2).
Public/Granted literature
- US20140231981A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-08-21
Information query
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