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US09065437B2 Circuit for driving high-side transistor utilizing voltage boost circuits 有权
使用升压电路驱动高端晶体管的电路

Circuit for driving high-side transistor utilizing voltage boost circuits
摘要：
A circuit for driving a transistor includes a drive circuit, a first voltage boost circuit and a second voltage boost circuit. The drive circuit has a first specific node, a second specific node, and a third specific node coupled to a control node of the transistor. The drive circuit is arranged for coupling the first specific node to the third specific node according to at least a voltage of the first specific node and a voltage of the second specific node in order to charge the control node. The first voltage boost circuit is coupled between the first specific node and a connection node of the transistor, and is arranged for boosting the voltage of the first specific node. The second voltage boost circuit is coupled between the first specific node and the second specific node, and is arranged for boosting the voltage of the second specific node.
摘要（中）：

用于驱动晶体管的电路包括驱动电路，第一升压电路和第二升压电路。 驱动电路具有耦合到晶体管的控制节点的第一特定节点，第二特定节点和第三特定节点。 驱动电路被布置成根据第一特定节点的电压和第二特定节点的电压来将第一特定节点耦合到第三特定节点，以便为控制节点充电。 第一电压升压电路耦合在第一特定节点和晶体管的连接节点之间，并且被布置用于升压第一特定节点的电压。 第二升压电路耦合在第一特定节点和第二特定节点之间，并且被布置用于升高第二特定节点的电压。

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