Invention Grant
US09054027B2 III-nitride device and method having a gate isolating structure
有权
III族氮化物器件和具有栅极隔离结构的方法
- Patent Title: III-nitride device and method having a gate isolating structure
- Patent Title (中): III族氮化物器件和具有栅极隔离结构的方法
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Application No.: US13886429Application Date: 2013-05-03
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Publication No.: US09054027B2Publication Date: 2015-06-09
- Inventor: Sameer Pendharkar , Naveen Tipirneni , Jungwoo Joh
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank Cimino
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/20 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/778
Abstract:
A semiconductor device containing a GaN FET has an isolating gate structure outside the channel area which is operable to block current in the two-dimensional electron gas between two regions of the semiconductor device. The isolating gate structure is formed concurrently with the gate of the GaN FET, and has a same structure as the gate.
Public/Granted literature
- US20140327011A1 III-NITRIDE TRANSISTOR LAYOUT Public/Granted day:2014-11-06
Information query
IPC分类:
