发明授权
- 专利标题: Overlay class F choke
- 专利标题(中): 覆盖类F阻塞
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申请号: US13226843申请日: 2011-09-07
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公开(公告)号: US09030256B2公开(公告)日: 2015-05-12
- 发明人: David E. Jones , Terry J. Stockert , William David Southcombe , Chris Levesque , Scott Yoder
- 申请人: David E. Jones , Terry J. Stockert , William David Southcombe , Chris Levesque , Scott Yoder
- 申请人地址: US NC Greensboro
- 专利权人: RF Micro Devices, Inc.
- 当前专利权人: RF Micro Devices, Inc.
- 当前专利权人地址: US NC Greensboro
- 代理机构: Withrow & Terranova, P.L.L.C.
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; H03F3/72 ; H03F1/02 ; H03F3/60 ; H03G3/00 ; H03F3/195 ; H03F3/24 ; H03F3/21
摘要:
Embodiments of the present disclosure relate to an overlay class F choke of a radio frequency (RF) power amplifier (PA) stage and an RF PA amplifying transistor of the RF PA stage. The overlay class F choke includes a pair of mutually coupled class F inductive elements, which are coupled in series between a PA envelope power supply and a collector of the RF PA amplifying transistor. In one embodiment of the RF PA stage, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. The collector of the RF PA amplifying transistor provides the RF stage output signal. The PA envelope power supply provides an envelope power supply signal to the overlay class F choke. The envelope power supply signal provides power for amplification.
公开/授权文献
- US20120229210A1 OVERLAY CLASS F CHOKE 公开/授权日:2012-09-13
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