发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12903403申请日： 2010-10-13
-
公开(公告)号： US09030007B2公开(公告)日： 2015-05-12
- 发明人: Daisuke Mizutani
- 申请人： Daisuke Mizutani
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2009-237377 20091014; JP2010-190604 20100827
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H05K1/14 ; H05K3/34 ; H05K3/36 ; H01L21/768 ; H05K1/02 ; H05K3/22
摘要：
A semiconductor device includes a first circuit base member including a surface having multiple first electrodes formed thereon, a second circuit base member being provided above the first circuit base member and having first through holes and second through holes formed respectively above the first electrodes, a semiconductor package provided above the second circuit base member, and multiple first bumps provided inside the first through holes and the second through holes to connect the first electrodes to the semiconductor package.
公开/授权文献
- US20110084383A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-04-14
信息查询
IPC分类:
