发明授权
US09029955B2 Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depths
有权
SOI上的集成电路包括具有不同深度的隔离沟槽的双极晶体管
- 专利标题: Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depths
- 专利标题(中): SOI上的集成电路包括具有不同深度的隔离沟槽的双极晶体管
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申请号: US13933396申请日: 2013-07-02
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公开(公告)号: US09029955B2公开(公告)日: 2015-05-12
- 发明人: Claire Fenouillet-Beranger , Pascal Fonteneau
- 申请人: Commissariat à l'énergie atomique et aux énergies alternatives , STMicroelectronics SA
- 申请人地址: FR Paris FR Mountrouge
- 专利权人: Commissariat á l'énergie atomique et aux énergies alternatives,STMicroelectronics SA
- 当前专利权人: Commissariat á l'énergie atomique et aux énergies alternatives,STMicroelectronics SA
- 当前专利权人地址: FR Paris FR Mountrouge
- 代理机构: Occhiuti & Rohlicek LLP
- 优先权: FR1256806 20120713
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L27/02 ; H01L27/06 ; H01L29/786 ; H01L27/12 ; H01L29/732 ; H01L29/06
摘要:
An integrated circuit includes a semiconductor substrate, a silicon layer, a buried isolating layer arranged between the substrate and the layer, a bipolar transistor comprising a collector and emitter having a first doping, and a base and a base contact having a second doping, the base forming a junction with the collector and emitter, the collector, emitter, base contact, and the base being coplanar, a well having the second doping and plumb with the collector, emitter, base contact and base, the well separating the collector, emitter and base contact from the substrate, having the second doping and extending between the base contact and base, a isolating trench plumb with the base and extending beyond the layer but without reaching a bottom of the emitter and collector, and another isolating trench arranged between the base contact, collector, and emitter, the trench extending beyond the buried layer into the well.
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