Invention Grant
- Patent Title: Semiconductor device and manufacturing method and operating method for the same
- Patent Title (中): 半导体器件及其制造方法和操作方法相同
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Application No.: US13710517Application Date: 2012-12-11
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Publication No.: US09019769B2Publication Date: 2015-04-28
- Inventor: Feng-Ming Lee , Yu-Yu Lin , Ming-Hsiu Lee
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L29/788 ; H01L21/28
Abstract:
A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a doped region and a stack structure. The doped region is in the substrate. The stack structure is on the substrate. The stack structure comprises a dielectric layer, an electrode layer, a solid electrolyte layer and an ion supplying layer.
Public/Granted literature
- US20140160852A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD AND OPERATING METHOD FOR THE SAME Public/Granted day:2014-06-12
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