发明授权
US09005880B2 Compositions comprising sulfonamide material and processes for photolithography
有权
包含磺酰胺材料的组合物和用于光刻的方法
- 专利标题： Compositions comprising sulfonamide material and processes for photolithography
- 专利标题（中）： 包含磺酰胺材料的组合物和用于光刻的方法
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申请号： US12592159申请日： 2009-11-19
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公开(公告)号： US09005880B2公开(公告)日： 2015-04-14
- 发明人: Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
- 申请人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
- 申请人地址： US MA Marlborough
- 专利权人： Rohm and Haas Electronic Materials, LLC
- 当前专利权人： Rohm and Haas Electronic Materials, LLC
- 当前专利权人地址： US MA Marlborough
- 代理机构： Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; G03F7/075
摘要：
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
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