Invention Grant
US08999823B2 Semiconductor device, method for manufacturing same, and display device
有权
半导体装置及其制造方法以及显示装置
- Patent Title: Semiconductor device, method for manufacturing same, and display device
- Patent Title (中): 半导体装置及其制造方法以及显示装置
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Application No.: US13125865Application Date: 2009-10-20
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Publication No.: US08999823B2Publication Date: 2015-04-07
- Inventor: Naoki Makita , Hiroshi Nakatsuji
- Applicant: Naoki Makita , Hiroshi Nakatsuji
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2008-273525 20081023
- International Application: PCT/JP2009/005478 WO 20091020
- International Announcement: WO2010/047086 WO 20100429
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/146 ; G09G5/10 ; G06F3/042 ; H01L29/786
Abstract:
A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.
Public/Granted literature
- US20110261019A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE Public/Granted day:2011-10-27
Information query
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