发明授权
- 专利标题: Dual use transistor
- 专利标题(中): 双用晶体管
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申请号: US13387311申请日: 2010-07-16
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公开(公告)号: US08989679B2公开(公告)日: 2015-03-24
- 发明人: Sever Cercelaru
- 申请人: Sever Cercelaru
- 申请人地址: GB Cambridge
- 专利权人: Cambridge Silicon Radio Limited
- 当前专利权人: Cambridge Silicon Radio Limited
- 当前专利权人地址: GB Cambridge
- 代理机构: Dergosits & Noah LLP
- 优先权: GB0913445.3 20090731
- 国际申请: PCT/EP2010/060358 WO 20100716
- 国际公布: WO2011/012473 WO 20110203
- 主分类号: H04B1/40
- IPC分类号: H04B1/40 ; H03F3/72 ; H03F3/195 ; H03F3/24
摘要:
A circuit for amplifying radio frequency signals comprising: a terminal for connection to an antenna; a common amplifier arranged in a common-gate configuration between a first node and said terminal; a transmit amplifier operable to amplify a radio frequency signal present at an input node and provide the amplified signal to said first node; and a receive amplifier operable to amplify a radio frequency signal present at said first node and provide the amplified signal to an output node; wherein the circuit is operable in two modes: in a receive mode, the common and receive amplifiers being configured so as to together form a receive cascode for amplifying radio frequency signals received at the terminal; and in a transmit mode, the common and transmit amplifiers being configured so as to together form a transmit cascode for amplifying radio frequency signals applied at the input node.
公开/授权文献
- US20120139644A1 DUAL USE TRANSISTOR 公开/授权日:2012-06-07
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