Invention Grant
- Patent Title: Fortification of charge storing material in high K dielectric environments and resulting apparatuses
- Patent Title (中): 在高K电介质环境和结果设备中强化电荷存储材料
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Application No.: US13615030Application Date: 2012-09-13
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Publication No.: US08987806B2Publication Date: 2015-03-24
- Inventor: D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett Brewer
- Applicant: D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Rhett Brewer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/792
- IPC: H01L29/792 ; B82Y10/00 ; H01L21/02 ; H01L21/28 ; H01L29/423
Abstract:
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.
Public/Granted literature
- US20130001673A1 FORTIFICATION OF CHARGE STORING MATERIAL IN HIGH K DIELECTRIC ENVIRONMENTS AND RESULTING APPARATUSES Public/Granted day:2013-01-03
Information query
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