发明授权
- 专利标题: Semiconductor device and communication device
- 专利标题(中): 半导体器件和通信设备
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申请号: US13901387申请日: 2013-05-23
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公开(公告)号: US08963637B2公开(公告)日: 2015-02-24
- 发明人: Hideki Koba , Keiki Watanabe , Kouji Fukuda
- 申请人: Hitachi, Ltd.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd
- 当前专利权人: Hitachi, Ltd
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2012-118190 20120524
- 主分类号: H03F3/45
- IPC分类号: H03F3/45
摘要:
A semiconductor device capable of achieving high speed performance in addition to correction of differential offset and a communication device provided with the semiconductor device are provided. For example, there are provided: a variable gain type differential amplifier circuit VGA1 which receives a gain setting signal ASET, which amplifies differential input signals INP and INN by a gain indicated by the gain setting signal, and which outputs differential output signals OUTP′ and OTUN′; and an offset correcting circuit unit OFCBK1 which cancels an offset voltage (VOF and VOFO) generated in the VGA1. Here, the OFCBK1 cancels an output offset voltage VOFO (which results in an input offset voltage VOF) by receiving the ASET, generating a correction voltage changed in accordance with the gain, and adding the correction voltage to the OUTP′ and OUTN′.
公开/授权文献
- US20130314158A1 SEMICONDUCTOR DEVICE AND COMMUNICATION DEVICE 公开/授权日:2013-11-28
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