发明授权
- 专利标题： Crack stop structure and method for forming the same
- 专利标题（中）： 断裂结构及其形成方法
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申请号： US13231961申请日： 2011-09-14
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公开(公告)号： US08963282B2公开(公告)日： 2015-02-24
- 发明人: Tse-Yao Huang , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Tse-Yao Huang , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L23/31 ; H01L23/00 ; H01L21/78 ; H01L21/56
摘要：
A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.
公开/授权文献
- US20130062727A1 CRACK STOP STRUCTURE AND METHOD FOR FORMING THE SAME 公开/授权日：2013-03-14
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