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US08962435B2 Method of forming semiconductor device having embedded strain-inducing pattern 有权
形成具有嵌入应变诱导图案的半导体器件的方法

Method of forming semiconductor device having embedded strain-inducing pattern
摘要：
A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets.
摘要（中）：

半导体器件可以包括有源区，其具有提供相对的源极和漏极区之间的沟道区的鳍部。 栅电极可以跨越在相对的源极和漏极区域之间的沟道区域上，并且第一和第二应变诱导结构可以在栅电极的相对侧上，并且可以被配置为在沟道区域上引起应变，其中第一和 第二应变诱导结构，其包括具有一对{111}晶体取向小面的相应的相对侧。

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