发明授权
- 专利标题： MOS transistor process
- 专利标题（中）： MOS晶体管工艺
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申请号： US13494016申请日： 2012-06-12
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公开(公告)号： US08962433B2公开(公告)日： 2015-02-24
- 发明人: Chin-I Liao , Chin-Cheng Chien
- 申请人： Chin-I Liao , Chin-Cheng Chien
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure is formed in the recess. (2) A cleaning process may be performed to clean the surface of the substrate beside the gate structure. An epitaxial structure is formed in the substrate beside the gate structure.
公开/授权文献
- US20130330898A1 MOS TRANSISTOR PROCESS 公开/授权日：2013-12-12
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