发明授权
- 专利标题： Imprint lithography method and apparatus
- 专利标题（中）： 压印光刻方法和装置
-
申请号： US12869381申请日： 2010-08-26
-
公开(公告)号： US08961801B2公开(公告)日： 2015-02-24
- 发明人: Sander Frederik Wuister , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
- 申请人： Sander Frederik Wuister , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsubry Winthrop Shaw Pittman LLP
- 主分类号： C03C15/00
- IPC分类号： C03C15/00 ; B44C1/20 ; B82Y10/00 ; B82Y40/00 ; G03F7/00
摘要：
In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
公开/授权文献
- US20110049097A1 IMPRINT LITHOGRAPHY METHOD AND APPARATUS 公开/授权日：2011-03-03
信息查询
