Invention Grant
- Patent Title: Post passivation interconnect structures and methods for forming the same
- Patent Title (中): 后钝化互连结构及其形成方法
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Application No.: US13618382Application Date: 2012-09-14
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Publication No.: US08952530B2Publication Date: 2015-02-10
- Inventor: Hsien-Wei Chen , Ying-Ju Chen
- Applicant: Hsien-Wei Chen , Ying-Ju Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/498
- IPC: H01L23/498
Abstract:
A device includes a metal pad, a passivation layer overlapping edge portions of the metal pad, and a first polymer layer over the passivation layer. A Post-Passivation-Interconnect (PPI) has a level portion overlying the first polymer layer, and a plug portion that has a top connected to the level portion. The plug portion extends into the first polymer layer. A bottom surface of the plug portion is in contact with a dielectric material. A second polymer layer is overlying the first polymer layer.
Public/Granted literature
- US20140077356A1 Post Passivation Interconnect Structures and Methods for Forming the Same Public/Granted day:2014-03-20
Information query
IPC分类:
