发明授权
- 专利标题: Error recovery for flash memory
- 专利标题(中): 闪存出错恢复
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申请号: US14172802申请日: 2014-02-04
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公开(公告)号: US08929138B2公开(公告)日: 2015-01-06
- 发明人: Yingquan Wu , Marcus Marrow
- 申请人: SK hynix memory solutions inc.
- 申请人地址: US CA San Jose
- 专利权人: SK hynix memory solutions inc.
- 当前专利权人: SK hynix memory solutions inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Van Pelt, Yi & James LLP
- 主分类号: G11C16/06
- IPC分类号: G11C16/06 ; G06F11/10
摘要:
An indication of a page type which failed error correction decoding is received. A threshold to adjust is selected from a plurality of thresholds based at least in part on the page type. A third adjusted threshold associated with the page type is generated, including by: determining a first number of flipped bits using a first adjusted threshold associated with the page type, determining a second number of flipped bits using a second adjusted threshold associated with the page type, and generating the third adjusted threshold using the first number of flipped bits and the second number of flipped bits.
公开/授权文献
- US20140173380A1 ERROR RECOVERY FOR FLASH MEMORY 公开/授权日:2014-06-19
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